Natural p–n junctions at the mos2 flake edges
Web14 de may. de 2014 · In the bulk region of MoS2, the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS2 heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level … WebAtomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and …
Natural p–n junctions at the mos2 flake edges
Did you know?
Web1 de may. de 2024 · However, the aggregation formed in nanosized MoS 2 reduces the exposure of active edge sites which hampers its electrocatalytic HER activity. In this paper, we demonstrate a facile hydrothermal synthesis of MoS 2 nanosheet/MoS 2 flake (MSN/MSF) homostructures by using MoS 2 flakes as templates. Webblock for the construction of 2D vdW p−n junctions as a p-type 2DLM. Here, we demonstrate a tunable p-GaTe/n-MoS 2 vdW p−n junction. The current rectification, PV and photodetection capabilities are systematically investigated under various temperatures, electrical gate bias conditions, and light intensities. The p−n junctions showed ...
Web1 de jun. de 2016 · Here, we show that the edges of as-exfoliated and etched MoS2 are naturally p-type doped and can form p-n junctions with the bulk of the flake. The width of these edge regions is around 20 nm. Web23 de sept. de 2014 · The fabricated lateral MoS2 p-n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of ∼7000%, specific detectivity of ∼5 × 10 (10) Jones, and light switching ratio of ∼10 (3)) and ideal rectifying behavior.
Web28 de may. de 2024 · Edge-1 refers to the termination of the MoS 2 flake, F-1, on the Si/SiO 2 substrate. B-1 (body) refers to the area within the flake F-1. Edge-2 refers to the boundary between flakes, F-1 and F-2. F-2 is an overlayer on F-1, having different thicknesses. B-2 is the area within F-2. WebNovel GeSe/MoS2 p-n heterojunctions are fabricated, combining the natural p-type doping in GeSe and n-type doping in MoS2. The temperature dependence of the measured junction current reveals that GeSe and MoS2 have a type-II band alignment with a conduction band offset of ~0.234 eV.
Web26 de sept. de 2024 · MoS2 edges exhibit good hydrogen evolution reaction (HER) activity but poor oxygen evolution reaction (OER) activity. The development of MoS2 edge …
WebNatural p–n Junctions at the MoS 2 Flake Edges. Sign in ... Search by subject; Keyword search; Natural p–n Junctions at the MoS2 Flake Edges. Author(s) Kang Wang, … bixby boulderWeb10 de jul. de 2013 · Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-indepe … dateline secrets and lies season 3 episode 14Web25 de sept. de 2024 · Owing to high absorption of p-type CZTS electrode in NIR region along with MoS 2 flakes in visible region and formation of p-n junction at CZTS-MoS 2 flakes interface shows ultra-high responsivity of 49.31 A W −1 and external quantum efficiency of 7.6 × 10 3 (%) with enhanced performance in NIR and visible region in … bixby breakfast clubWeb26 de may. de 2015 · We investigate the wavelength- and polarization-dependence of photocurrent signals generated at few-layer MoS2-metal junctions through spatially resolved photocurrent measurements. When incident photon energy is above the direct bandgap of few-layer MoS2, the maximum photocurrent response occurs for the light … bixby bridge campingWeb19 de ago. de 2024 · Natural p-n Junctions at the MoS2 Flake Edges. Two-dimensional (2D) semiconductors are holding promises as channel materials for field-effect … dateline secrets on the emerald coastWeb19 de ago. de 2024 · School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China. 2. International Center for Materials Nanoarchitectonics, … dateline seduction pattyWeb28 de may. de 2024 · Anisotropic behaviour of the A1g vibrational mode of MoS2 at the edges has been reported. Polarized Raman spectroscopy is used to identify edges, and … dateline secrets revealed